Microelectronic devices are liable to failure due to different electrochemical processes. Corrosion, and electrodeposition often occur due to moisture adsorption and presence of a contaminant in the surrounding environment of these devices. The objective of this investigation was to characterize the effects of contaminants, moisture levels on growth of a dendrite-like structure which causing short between the interconnectors(copper alloy) in a electronic circuit.

The dendrite growth rate was measured as function of cupric chloride, moisture levels, and applied potential across the conducting lines. It was observed that the velocity of dendrite growth can be measured, but it is generally lower than the theoretical predications.

Subject
Test methods, Reliability, Substrates, Wiring, Acidity, Sodium chloride solution, Ion concentrations, Mechanical failure, Equipment, Copper, Electrodes, Electrolytes, Electrode potential
Keywords:
Microelectronic devices, Dendritic growth, Metallization, Contaminants, Dendrite velocity, Cupric chloride
© 1996 Association for Materials Protection and Performance (AMPP). All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means (electronic, mechanical, photocopying, recording, or otherwise) without the prior written permission of AMPP. Positions and opinions advanced in this work are those of the author(s) and not necessarily those of AMPP. Responsibility for the content of the work lies solely with the author(s).
1996
Association for Materials Protection and Performance (AMPP)
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