A model electronic device, consisting of two sputter-deposited copper conducting lines on an α-alumina substrate, has been subjected to electrochemical conditions which lead to failure by dendrite growth. The growth kinetics of copper dendrites have been determined when either the model substrates were immersed in bulk electrolytes or covered by thin layers (approximately 1.9 μm) of electrolyte. The electrolytes used in the study contained sulfuric acid (pH=1.0) with varying concentrations of dissolved copper ions. The experiments were performed poteniostatically by applying a cathodic potential. The effect of varying the copper ion concentration and cathodic potential was examined. The behavior of the bulk and thin layer electrolytes is reported. Experimentally measured dendrite growth rates have been compared with theoretical predictions based on a maximum growth velocity theory. While the theory correctly predicts general experimental trends, the predicted dendrite growth rates for the bulk solutions are approximately two orders of magnitude larger than those measured experimentally.

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