A problem that has caused great reluctance on the part of users of high reliable electronic systems to accept plastic encapsulated semiconductors, integrated circuits and transistors, has been internal metalization corrosion. These devices use from 2,000 to 10,000 Å of evaporated aluminum on the silicon die for contact of gold or aluminum wires. The die are then encapsulated in plastic--epoxy, silicone, or phenolic--with or without a resilient high purity silicone undercoating on the chip. Depending upon the molding process--injection, casting, or transfer--various additives are included in the plastic mix, such as mold release agents, fillers, viscosity controls, and flame retardents. This increases the level of available polar constituents, thus increasing the devices' susceptibility to corrosion reactions.
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TECHNICAL PAPER
Corrosion of Semiconductor Contact Metalization
Edward B. Hakim
Edward B. Hakim
US Army Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey
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Paper No:
C1974-74025, pp. 1-6; 6 pages
Published Online:
March 04 1974
Citation
Edward B. Hakim; March 4–8, 1974. "Corrosion of Semiconductor Contact Metalization." Proceedings of the CORROSION 1974. CORROSION 1974. Chicago, IL. (pp. 1-6). AMPP. https://doi.org/10.5006/C1974-74025
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