Consideration is given for the semiconducting properties of protective oxides on steel. The semiconductor model for the protective oxide on steel provides a basis for the application of semiconductor concepts to methods for inhibition of the corrosion processes. An anodization technique was selected for growing protective oxide films doped with foreign metals. Results show difficulties in passive film formation in some systems while other systems yield anodic films formed in the presence of foreign metal ions. Anodically treated steel specimens were evaluated using the polarization resistance technique. Polarization resistance values for steel anodically treated in the presence of aluminum ions indicated corrosion rates up to one order of magnitude lower than steel treated in the absence of aluminum. The anodization technique appears to be an appropriate method for modifying the properties of the protective oxide layer on steel.

Subject
Materials, Ions, Aluminum, Oxide layers, Oxide films, Metal oxides, Acidity, Film formation, Metals, Steel, Corrosion protection, Corrosion resistance, Polarization resistance
© 1984 Association for Materials Protection and Performance (AMPP). All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means (electronic, mechanical, photocopying, recording, or otherwise) without the prior written permission of AMPP. Positions and opinions advanced in this work are those of the author(s) and not necessarily those of AMPP. Responsibility for the content of the work lies solely with the author(s).
1984
Association for Materials Protection and Performance (AMPP)
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